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bts5210g smart high-side power switch profet data sheet, rev. 1.3, april 2009 automotive
data sheet 2 rev. 1.3, 2009-04-16 smart high-side power switch bts5210g
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data sheet 3 rev. 1.3, 2009-04-16 smart high-side power switch bts5210g
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data sheet 4 rev. 1.3, 2009-04-16 smart high-side power switch bts5210g pin definitions and functions pin symbol function 1,7, 8,14 v bb positive power supply voltage . design the wiring for the simultaneous max. short circuit currents from channel 1 to 2 and also for low thermal resistance 2 gnd logic ground 3 in1 5 in2 input 1,2 activates channel 1,2 in case of logic high signal 4 st1 6 st2 diagnostic feedback 1,2 of channel 1,2 open drain 12,13 out1 output 1,2 protected high-side power output of channel 1,2. design the wiring for the max. short circuit current; both output pins have to 9,10 out2 be connected in parallel for operation according this spec. 11 nc not connected pin configuration (top view) v bb 1 ? 14 v bb gnd 2 13 out1 in1 3 12 out1 st1 4 11 nc in2 5 10 out2 st2 6 9 out2 v bb 7 8 v bb
data sheet 5 rev. 1.3, 2009-04-16 smart high-side power switch bts5210g parameter symbol values unit supply voltage (overvoltage protection see page 6) v bb 43 v supply voltage for full short circuit protection t j,start = -40 ...+150c v bb 36 v load current (short-circuit current, see page 6) i l self-limited a load dump protection 1 ) v loaddump = v a + v s , v a = 13.5 v r i 2 ) = 2 , t d = 400 ms; in = low or high, each channel loaded with r l = 13.5 , v load dump 3 ) 60 v operating temperature range storage temperature range t j t stg -40 ...+150 -55 ...+150 c power dissipation (dc) 4) t a = 25c: (all channels active) t a = 85c: p tot 3,05 1,59 w maximal switchable inductance, single pulse v bb = 12v, t j,start = 150c 4) , see diagrams on page 10 i l = 2.9 a, e as = 65 mj, 0 one channel: i l = 5.7 a, e as = 125 mj, 0 two parallel channels: z l 11,2 5,6 mh electrostatic discharge capability (esd) in: (human body model) st: out to all other pins shorted: acc. mil-std883d, method 3015.7 and esd assn. std. s5.1-1993 r=1.5k ; c=100pf v esd 1.0 4.0 8.0 kv input voltage (dc) see internal circuit diagram page 9 v in -10 ... +16 v current through input pin (dc) pulsed current through input pin 5 ) current through status pin (dc) i in i inp i st 0.3 5.0 5.0 ma 1 ) supply voltages higher than v bb(az) require an external current limit for the gnd and status pins (a 150 resistor for the gnd connection is recommended. 2) r i = internal resistance of the load dump test pulse generator 3) v load dump is setup without the dut connected to the generator per iso 7637-1 and din 40839 4 ) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for v bb connection. pcb is vertical without blown air. see page 14 5 ) only for testing
data sheet 6 rev. 1.3, 2009-04-16 smart high-side power switch bts5210g p arameter an d c on di t i ons s ym b o l v a l ues u n i t min typ max thermal resistance junction - soldering point 6)7) each channel: r thjs -- -- 15 k/w junction ? ambient 6) @ 6 cm 2 cooling area one channel active: all channels active: r thja -- -- -- -- 45 40 -- -- -- electrical characteristics parameter and conditions, each of the four channels symbol values unit at t j = -40...+150c, v bb = 12 v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (v bb to out); i l = 2 a each channel, t j = 25c: t j = 150c: two parallel channels, t j = 25c: see diagram, page 11 r on -- -- -- 110 210 55 140 280 70 m nominal load current one channel active: two parallel channels active: device on pcb 6) , t a = 85c, t j 150c i l(nom) 1.8 3.4 2.4 3.9 -- a output current while gnd disconnected or pulled up 8 ) ; v bb = 32 v, v in = 0, see diagram page 9 i l(gndhigh) -- -- 2 ma turn-on time 9 ) in to 90% v out : turn-off time in to 10% v out : r l =12 t on t off -- -- 100 100 250 270 s slew rate on 9 ) 10 to 30% v out , r l =12 : d v /dt on 0.2 -- 1.0 v/ s slew rate off 9 ) 70 to 40% v out , r l =12 : -d v /dt off 0.2 -- 1.1 v/ s 6 ) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for v bb connection. pcb is vertical without blown air. see page 14 7 ) soldering point: upper side of solder edge of device pin 15. see page 14 8 ) not subject to production test, specified by design 9 ) see timing diagram on page 12.
data sheet 7 rev. 1.3, 2009-04-16 smart high-side power switch bts5210g p arameter an d c on di t i ons, each of the four channels s ym b o l v a l ues u n i t at t j = -40...+150c, v bb = 12 v unless otherwise specified min typ max operating parameters operating voltage v bb(on) 5.5 -- 40 v undervoltage switch off 10 ) t j =-40c...25c : v bb(u so) -- -- 4.5 v t j =125c: -- -- 4.5 11) overvoltage protection 12 ) i bb = 40 ma v bb(az) 41 47 52 v standby current 13 ) t j =-40c...25c : v in =0; see diagram page 11 t j =150c: i bb(off) -- -- 5 -- 8 12 a t j =125c: -- -- 8 11) off-state output current (included in i bb(off) ) v in = 0; each channel i l(off) -- 1 5 a operating current 14) , v in = 5v, one channel on: all channels on: i gnd -- -- 0.5 1.0 0.9 1.7 ma protection functions 15) current limit, v out = 0v , (see timing diagrams, page 12) t j =-40c: t j =25c: t j =+150c: i l(lim) -- -- 5 -- 9 -- 14 -- -- a repetitive short circui t current limit, t j = t jt each channel two channels (see timing diagrams, page 12) i l(scr) -- -- 6.5 6.5 -- -- a initial short circ uit shutdown time t j,start =25c: v out = 0v (see timing diagrams on page 12) t off(sc) -- 2 -- ms output clamp (inductive load switch off) 16) at v on(cl) = v bb - v out , i l = 40 ma v on(cl) 41 47 52 v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis t jt -- 10 -- k 10) is the voltage, where the device doesnt change its switching condition for 15ms after the supply voltage falling below the lower limit of vbb(on) 11 ) not subject to production test, specified by design 12 ) supply voltages higher than v bb(az) require an external current limit for the gnd and status pins (a 150 resistor for the gnd connection is recommended). see also v on(cl) in table of protection functions and circuit diagram on page 9. 13 ) measured with load; for the whole device; all channels off 14 ) add i st , if i st > 0 15 ) integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as "outside" normal operating range. protection functions are not designed for continuous repetitive operation. 16 ) if channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest v on(cl)
data sheet 8 rev. 1.3, 2009-04-16 smart high-side power switch bts5210g parameter and conditions, each of the four channels symbol values unit at t j = -40...+150c, v bb = 12 v unless otherwise specified min typ max reverse battery reverse battery voltage 17 ) - v bb -- -- 32 v drain-source diode voltage (v out > v bb ) i l = - 2.0 a, t j = +150c - v on -- 600 -- mv diagnostic characteristics open load detection voltage v out(ol) 1 1.7 2.8 4.0 v input and status feedback 18 ) input resistance (see circuit page 9) r i 2.5 4.0 6.0 k input turn-on threshold voltage v in(t+) -- -- 2.5 v input turn-off threshold voltage v in(t-) 1.0 -- -- v input threshold hysteresis v in(t) -- 0.2 -- v status change after positive input slope 19) with open load t d(ston) -- 10 20 s status change after positive input slope 19) with overload t d(ston) 30 -- -- s status change after negative input slope with open load t d(stoff) -- -- 500 s status change after negative input slope 19) with overtemperature t d(stoff) -- -- 20 s off state input current v in = 0.4 v: i in(off) 5 -- 20 a on state input current v in = 5 v: i in(on) 10 35 60 a status output (open drain) zener limit voltage i st = +1.6 ma: st low voltage i st = +1.6 ma: v st(high) v st(low) 5.4 -- -- -- -- 0.6 v 17 ) requires a 150 resistor in gnd connection. the reverse load current through the intrinsic drain-source diode has to be limited by the connected load. power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. the temperature protection is not active during reverse current operation! input and status currents have to be limited (see max. ratings page 4 and circuit page 9). 18 ) if ground resistors r gnd are used, add the voltage drop across these resistors. 19 ) not subject to production test, specified by design
data sheet 9 rev. 1.3, 2009-04-16 smart high-side power switch bts5210g truth table ( each channel ) in out st normal operation l h l h h h open load l h z h l 20 ) h overtemperature l h l l h l l = "low" level x = don't care z = high impedance, potential depends on external circuit h = "high" level status signal valid after the time delay shown in the timing diagrams parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel (see truth table). if switching channel 1 to 2 in parallel, the status outputs st1 and st2 have to be configured as a 'wired or' function with a single pull-up resistor. terms *+, "' ;/' :9 ;/' " :9 ' '0( ' # 1 ( " ;/ " # ;/ )0 " "' " +/' " " " " "' " +/ " #' :9 +/' , 00>0 +/ +/ +/' leadframe (v bb ) is connected to pin 1,7,8,14 external r gnd optional; single resistor r gnd = 150 for reverse battery protection up to the max. operating voltage. 20 ) l, if potential at the output exceeds the openload detection voltage
data sheet 10 rev. 1.3, 2009-04-16 smart high-side power switch bts5210g input circuit (esd protection), in1 or in2 " :9 " .+9?9 " " " the use of esd zener diodes as voltage clamp at dc conditions is not recommended. status output, st1 or st2 +/ :9 .+9 ?9 < +/$& esd-zener diode: 6.1 v typ., max 0.3 ma; r st(on) < 375 at 1.6 ma. the use of esd zener diodes as voltage clamp at dc conditions is not recommended. inductive and overvoltage output clamp, out1 or out2 < ;/ ? 4 :9 v on clamped to v on(cl) = 47 v typ. overvolt. and reverse batt. protection < " +/ +/ :9 :9 +
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?' " ? # :9 # ;/ +/ < v z1 = 6.1 v typ., v z2 = 47 v typ., r gnd = 150 , r st = 15 k , r i = 3.5 k typ. in case of reverse battery the load current has to be limited by the load. temperature protection is not active open-load detection, out1 or out2 off-state diagnostic condition: open load, if v out > 3 v typ.; in low +$ #
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:9 -- .@/ gnd disconnect *+, " +/ ;/ :9 " +/ :9 any kind of load. in case of in = high is v out v in - v in(t+) . due to v gnd > 0, no v st = low signal available.
data sheet 11 rev. 1.3, 2009-04-16 smart high-side power switch bts5210g gnd disconnect with gnd pull up *+, " +/ ;/ :9 :9 " +/ any kind of load. if v gnd > v in - v in(t+) device stays off due to v gnd > 0, no v st = low signal available. v bb disconnect with energized inductive load *+, " +/ ;/ :9
for inductive load currents up to the limits defined by z l (max. ratings and diagram on page 10) each switch is protected against loss of v bb . consider at your pcb layout that in the case of vbb dis- connection with energized inductive load all the load current flows through the gnd connection. i n d uct i ve l oa d sw i tc h -o ff energy dissipation *+, " +/ ;/ :9 - . . . . + # . # # # # ? energy stored in load inductance: e l = 1 / 2 l i 2 l while demagnetizing load inductance, the energy dissipated in profet is e as = e bb + e l - e r = i l (t) dt, with an approximate solution for r l > 0 : e as = i l l 2 r l ( v bb +|v out(cl) |) (1+ i l r l |v out(cl) | ) maximum allowable load inductance for a single switch off (one channel) 4) t j,start = 150c, v bb = 12 v, r l =0 z l [mh] '(, i l [a]
data sheet 12 rev. 1.3, 2009-04-16 smart high-side power switch bts5210g typ. on-state resistance
; i l = 2 a, in = high r on [mohm] ' > ' , ) ( /abc* 'c* c* v bb [v] typ. standby current ; v bb = 9...34 v, in1,2 = low i bb(off) [ a] ' ' ( ( ' t j [c]
data sheet 13 rev. 1.3, 2009-04-16 smart high-side power switch bts5210g figure 1a: v bb turn on: "' ;/ +/ " ;/' +/' figure 2a: switching a resistive load, turn-on/off time and slew rate definition: " ;/ " # on off )d e e 11 d figure 2b: switching a lamp: " +/ ;/ # " figure 3a: turn on into short circuit: shut down by overtemperature, restart by cooling f " +/ " # #$+*& " " #$& 11$+*& heating up of the chip may require several milliseconds, depending on external conditions timing diagrams all channels are symmetric and consequently the diagrams are valid for channel 1 to channel 4
data sheet 14 rev. 1.3, 2009-04-16 smart high-side power switch bts5210g figure 3b: turn on into short circuit: shut down by overtemperature, restart by cooling (two parallel switched channels 1 and 2) +/e' "e' ##' #$+*& " '8" #$& "<" 11$+*& st1 and st2 have to be configured as a 'wired or' function st1/2 with a single pull-up resistor. figure 4a: overtemperature: reset if t j < t jt () +. / 0 figure 5a: open load: detection in off-state, turn on/off to open load open load of channel 1; other channels normal operation ;/ +/ " " # 5 5 figure 6a: status change after, turn on/off to overtemperature overtemperature of channel 1; other channels normal operation +/ " (5 '5
data sheet 15 rev. 1.3, 2009-04-16 smart high-side power switch bts5210g package outlines figure 1 pg-dso-14-37 (plastic dual small outline package) (rohs-compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb- free finish on leads and suitable for pb-fre e soldering according to ipc/jedec j-std-020). please specify the package needed (e.g. green package) when placing an order 1) does not include plastic or metal protrusion of 0.15 max. per side 2) lead width can be 0.61 max. in dambar area -0.2 8.75 1) 0.64 0.19 +0.06 index marking 1.27 +0.10 0.41 0.1 1 14 2) 7 14x 8 0.175 (1.47) 0.07 0.2 6 0.35 x 45? -0.2 1.75 max. 4 1) 0.25 8?max. -0.06 0.2 m ab m 0.2 c c b a gps01230 you can find all of our packages, so rts of packing and others in our infineon internet page ?products?: http://www.infineon.com/products . dimensions in mm
data sheet 16 rev. 1.3, 2009-04-16 smart high-side power switch bts5210g revision history version date changes rev. 1.3 2009-04-16 modification of the package name extension. v1.2 2007-09-25 modification of the package drawing. v1.1 2007-05-29 creation of the green datasheet. first page : adding the green logo and the aec qualified adding the bullet aec qualified and the rohs compliant features package page modification of the package to be green.
edition 2009-04-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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